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ASAP™ Memory and STAR™ Memory
Virage Logic’s ASAP Memory product line represents the largest selection of silicon proven, low risk, easy to integrate, embedded memory IP available today. Hundreds of memory compilers are available ranging from 0.25um to 65nm and spanning many foundries to address the demanding requirements of density, speed and power.
Virage Logic has architected three separate families of sub-megabit embedded memory compilers under the Area, Speed, and Power (ASAP) Memory product line. The High-Density (HD) memories address the needs of many applications that are optimized for area; the High-Speed (HS) memories address the requirements of high-performance systems; and the Ultra-Low Power (ULP) memories address the needs of power-sensitive portable applications.
High-Density (HD)
The High Density family of memory compilers use the supported foundry bit cells to address the area sensitive needs required in today’s competitive SoC design environment. The High Density architecture leverages design techniques to optimize area without compromising on quality. Advances in manufacturing technology enable more integration but also bring more design challenges. These technological challenges are addressed in the High Density memory architecture to enable optimized area while ensuring high quality products by leveraging advanced design techniques as well as test chip validation. Consistency and a good understanding of present and future technological challenges ensures low customer risk.
The High-Density family consists of:
- 1 Port Register File
- 2 Port Register File
- Single Port SRAM
- Dual Port SRAM
- ROM
The ROM Compiler generates instances that may be programmed by a ROM programming tool.
High-Speed Memories (HS)
Virage Logic's high-speed memories are architected to meet high performance requirements without compromising product quality. The high speed memory architecture leverages state of the art circuit techniques and rigid design practices to ensure high performance does not come as the price of quality. The advanced design techniques used ensure tight internal timing controls across all process corners, operating voltages and temperatures. Some of these advanced design techniques include high-speed sense amplifiers, fast clocking, and fast bit-line recovery, which contribute to achieving the high speeds required by today's high-performance applications.
The High-Speed family consists of:
- Single Port SRAM
- Dual Port SRAM
- 1 Port Register File
- Multiport Register File
Ultra-Low-Power (ULP)
Ultra-low-power memory architecture enable users to take advantage of memories with reduced active and leakage power required to support the needs of today’s portable and battery operated products. The Ultra-low power architecutre involves using techniques such as self-timed clocking, clock-partitioning, reduced bit-line swing, and array banking to deliver the lowest possible power. Sophisticated power models based on SPICE provide detailed and accurate power models for system integration. End of cycle shut-off logic and the addition of a memory disable pin ensure zero quiescent current regardless of the state of the clock or input pins, thereby facilitating very low power consumption when the memory is idle. The advanced Ultra-low power architecture has been in used for designs as long ago as 180nm.
Lisa Minwell, Virage Logic Technical Marketing Director
Highly Configurable Memory for Advanced Power Management Video Overview
All ASAP memories can optionally include the comprehensive Built-In-Self-Test (BIST) implementation found in Virage Logic's STAR™ Memory System that includes self-testable and repairable memories ranging in size from the smallest register files (RF) to the largest multi-megabit memories, or integrate with most third-party BIST engines.
STAR Memory provides embedded memories designed for testability and manufacturing to optimize yield. Building on the ASAP Memory product line, STAR memories include redundancy capabilities for repair purposes.
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